Manufacturing method of semiconductor device

ABSTRACT

After formation of a silicon Fin part on a silicon substrate, a thin film including an impurity atom which becomes a donor or an acceptor is formed so that a thickness of the thin film formed on the surface of an upper flat portion of the silicon Fin part becomes large relative to a thickness of the thin film formed to the surface of side wall portions of the silicon Fin part. A first diagonal ion implantation from a diagonal upper direction to the thin film is performed and subsequently a second diagonal ion implantation is performed from an opposite diagonal upper direction to the thin film. Recoiling of the impurity atom from the inside of the thin film to the inside of the side wall portions and to the inside of the upper flat portion is realized by performing the first and second diagonal ion implantations.

This application is based upon and claims the benefit of priority fromJapanese patent application No. 2010-189218, filed Aug. 26, 2010, thedisclosure of which is incorporated herein in its entirety by reference.

BACKGROUND OF THE INVENTION

The present invention relates to a manufacturing method of asemiconductor device and, in particular, relates to a doping method ofan impurity atom to a horizontal surface and vertical side walls of acubic three-dimension device.

As an example of a cubic three-dimension device related to the presentinvention, a Fin (fin) type FET (Field Effect Transistor) will bedescribed with reference to FIG. 2.

A silicon Fin part 11 of a Fin type is formed onto a silicon substrate1. The silicon Fin part 11 is formed with a drain part D and a sourcepart S, and a channel part is formed between the drain part D and thesource part S. A gate electrode G made of polysilicon or a metal isformed through a gate insulation film 9 so as to cover the surface ofthe channel part between the drain part D and the source part S. Inorder to reduce an electric resistance, an impurity of highconcentration more than 10²⁰ cm⁻³ is implanted into the drain part D andthe source part S. 16 is an insulation layer.

As a method for performing doping (implanting) to vertical side walls ofthe drain part and the source part of a three-dimension Fin type FET,the present inventors have proposed a method shown in FIGS. 3A to 3D(however, it is still unpublished). FIGS. 3A to 3D illustrate an areashown by a dashed line in FIG. 2 with a sectional view.

In FIG. 3A, a silicon Fin part 11 is formed onto a silicon substrate 1with an etching process by using a hard mask 12 such as SiO₂, SiN or thelike. Next, a plane part (a plane part except for the silicon Fin part11) of the silicon substrate 1 is covered with the insulation layer 16made of SiO₂ or the like and a deposited film 2 including Boron B isformed with plasma to both side walls of the silicon Fin part 11 in thestate where the hard mask 12 used in the etching process is remained atan upper end of the silicon Fin part 11. In this process, although thedeposited film 2 is formed onto the insulation layer 16 that is theinsulation film, the deposited film 2 formed onto the insulation layer16 is removed later.

Next, by obliquely irradiating an ion beam 5 from an upper leftdirection (diagonal upper direction) of the silicon Fin part 11, a heavyion such as Ge, Xe or the like is implanted. As result, by a knock oneffect (or action) which will be described later, electro-activeimpurity in silicon, which are present in the deposited film 2 isimplanted into a left side wall of the silicon Fin part 11 (FIG. 3A).Subsequently, by obliquely irradiating the ion beam 5 from an upperright direction (diagonal upper direction) of the silicon Fin part 11, aheavy ion such as Ge, Xe or the like is implanted. As a result,electro-active impurity in silicon, which are present in the depositedfilm 2 is implanted into a right side wall of the silicon Fin part 11(FIG. 3B). Thus, an impurity diffusion layer 3 is formed in the bothside walls of the silicon Fin part 11 (FIG. 3C). Then, the depositedfilm 2 is removed (FIG. 3D). In the example, an incidence angle (anangle to a vertical line) of the ion beam 5 to the side wall of thesilicon Fin part 11 is within 20° and approximately 10° is preferable.

In the Fin type FET manufactured with the above-mentioned method, anupper portion of the silicon Fin part 11 is never utilized as a channelregion of a transistor. However, if the upper portion of the silicon Finpart 11 can be utilized as a channel region of a transistor, it ispossible to reduce a height of the silicon Fin part 11 and to increase aFin width (a size of horizontal direction in FIGS. 3A to 3D) of thesilicon Fin part 11. This is advantageous in manufacturing the Fin typeFET. Further, it can bring an increase in drive current and thecharacteristic of the transistor can be improved. Such a Fin type FET iscalled a TriFET. In this case, it is required to implant the impurityinto upper side walls of the silicon Fin part 11, that is an upper flatportion of the silicon Fin part 11, in the same concentration level asthe side walls lower than the upper flat portion.

However, in the above method proposed by the present inventors, theimpurity implantation to the upper flat portion of the silicon Fin partis never considered. For this reason, it is impossible to effectivelyutilize the upper portion of the silicon Fin part and therefore the Fintype FET has degraded drive current.

SUMMARY OF INVENTION

An object of the present invention is to improve a doping method of animpurity atom to side wall portions and an upper flat portion of a cubicconcavity and convexity part of a three-dimensional device.

A specific object of the present invention is to provide a method forperforming impurity diffusion to a three-dimension device, for example,an upper flat portion of a silicon Fin part, in the same concentrationas side wall portions of the silicon Fin part.

In a semiconductor device manufacturing method according to the presentinvention, a cubic concavity and convexity part is formed with anetching process or the like onto a semiconductor substrate which is abase substrate of the semiconductor device. A thin film including animpurity atom which can become a carrier impurity atom serving as adonor or an acceptor in the semiconductor substrate is formed, as adeposited film, to the cubic concavity and convexity part so that a filmthickness of the thin film formed on an upper flat portion of the cubicconcavity and convexity part becomes large relative to a film thicknessof the thin film formed on the surface of side wall portions of thecubic concavity and convexity part. An ion of atom (heavy atom) which islarger in atomic weight than the impurity atom which becomes anelectro-carrier in the semiconductor substrate is obliquely implantedfrom a diagonal upper direction of the cubic concavity and convexitypart to thereby implant the impurity atomic into the side wallsincluding un upper portion of the cubic concavity and convexity part byutilizing a recoil effect according to knocking on the ion implantation.In this process, an implantation amount (dose amount) of the impurityatom is adjusted with a thickness of the thin film, i.e. the depositedfilm. By utilizing a phenomenon where the implantation amount of theimpurity atom decreases as the thickness of the deposited filmincreases, the implantation amount of the side walls of the cubicconcavity and convexity part is made to become equal to the implantationamount of the upper flat portion of the cubic concavity and convexitypart. For this purpose, a diagonal ion implantation from a diagonalupper direction of the cubic concavity and convexity part is carried outtwo times from two opposite diagonal directions and then the thicknessof the deposited film deposited to the upper flat portion of the cubicconcavity and convexity part is selected so that the impurity atoms areimplanted with knock on effect (or action) approximately half in amountrelative to the side wall portion of the cubic concavity and convexitypart. It is supposed that an ion implantation angle (an angle to adirection orthogonal to the upper flat portion) is, for example, 10°, anion implantation angle (an angle to a direction orthogonal to thesurface of the side wall) to the surface of the side wall of the cubicconcavity and convexity part becomes equal to 80°. In this case, as willbe described later in detail, since the dose amount (ion implantationamount) of the side wall of the cubic concavity and convexity partbecomes a substantial dose amount of 17.6% defined by cosine 80°/cosine10° relative to the upper surface (upper flat portion) of the cubicconcavity and convexity part, the thickness of the deposited filmdeposited on the upper flat portion of the cubic concavity and convexitypart is set to enough thickness concomitant with the above mentionedvalue. Generally, in the film deposition with plasma, since the coverageof the deposited film to the upper flat portion and the side walls ofthe cubic concavity and convexity part can be controlled, it is naturalthat the deposited film is formed to the upper flat portion with a thickthickness while the deposited film is formed to the side walls with athin thickness and therefore the film formation is easy.

Aspects of the present invention are enumerated as follows.

(First Aspect)

A manufacturing method of a semiconductor device according to a firstaspect of this invention comprises forming a cubic concavity andconvexity part on the surface of a semiconductor substrate which is abase substrate of the semiconductor device. The cubic concavity andconvexity part has side wall portions and an upper flat portion. Themanufacturing method further comprises depositing on the surface of thesemiconductor substrate an impurity thin film including an impurity atomwhich becomes a donor or an acceptor in the semiconductor substrate sothat a film thickness of the impurity thin film formed on the surface ofthe upper flat portion becomes large relative to a film thickness of theimpurity thin film formed on the surface of the side wall portions. Themanufacturing method still further comprises performing a first diagonalion implantation from a diagonal upper direction to the impurity thinfilm deposited on the cubic concavity and convexity part andsubsequently a second diagonal ion implantation from an oppositediagonal upper direction to the impurity thin film deposited on thecubic concavity and convexity part and recoiling the impurity atom fromthe inside of the impurity thin film to the inside of the side wallportions and the inside of the upper flat portion of the cubic concavityand convexity part by performing the first and second diagonal ionimplantations. It is important that an impurity amount implanted to theside wall portion is substantially a half of an impurity amountimplanted to the upper flat surface in a single ion implantation. By thefirst and second diagonal ion implantations from diagonal upper left andright directions, the impurity is implanted into the side wall portionand the upper flat portion with the same amount

(Second Aspect)

In the manufacturing method according to the first aspect, a ratio ofimpurity implantations to the side wall portion and the upper flatportion is adjusted by adjusting a ratio of a deposition thickness ofthe impurity thin film deposited to the side wall portion and adeposition thickness of the impurity thin film deposited to the upperflat portion.

(Third Aspect)

In the manufacturing method according to the first aspect, a ratio ofimpurity implantations to the side wall portion and the upper flatportion is adjusted by adjusting an ion implantation angle of the firstand second diagonal ion implantations.

(Fourth Aspect)

In the manufacturing method according to the first aspect, a ratio ofimpurity implantations to the side wall portion and the upper flatportion is adjusted by adjusting a ratio of a deposition thickness ofthe impurity thin film deposited to the side wall portion and adeposition thickness of the impurity thin film deposited to the upperflat portion and by adjusting an ion implantation angle of the first andsecond diagonal ion implantations.

(Fifth Aspect)

In the manufacturing method according to the first aspect, an impurityis implanted into the side wall portion and the upper flat portion at aratio of substantially 2:1 in amount by adjusting a ratio of adeposition thickness of the impurity thin film deposited to the sidewall portions and a deposition thickness of the impurity thin filmdeposited to the upper flat portion and by adjusting an ion implantationangle of the first and second diagonal ion implantations.

(Sixth Aspect)

In the manufacturing method according to the fifth aspect, by performingthe first diagonal ion implantation from the diagonal upper directionand the second diagonal ion implantation from the opposite diagonalupper direction, the impurity is implanted into the side wall portionand the upper flat portion with the same amount.

(Seventh Aspect)

In the manufacturing method according to any one of the third throughfifth aspects, a ratio of a deposition thickness of the impurity thinfilm deposited to the side wall portions and a deposition thickness ofthe impurity thin film deposited to the upper flat portion a ratio ofdeposited film is set so that the deposition thickness of the impuritythin film deposited to the upper flat portion is twice or more thedeposition thickness of the impurity thin film deposited to the sidewall portion.

(Eighth Aspect)

In the manufacturing method according to the first aspect, a recoilcondition and a dose atomic weight corresponding to an implantation doseamount are controlled by an adjustment of a deposition thickness of theimpurity thin film deposited to the side wall portion and a depositionthickness of the impurity thin film deposited to the upper flat portion,an adjustment of a species of an impurity deposition material of theimpurity thin film, or an adjustment of an implantation ion species, anion implantation angle, an implantation energy, and an implantation doseamount.

(Ninth Aspect)

In the manufacturing method according to the first aspect, the impurityatom of the impurity thin film is any one of B, P, and As.

(Tenth Aspect)

In the manufacturing method according to the first aspect, as theimpurity thin film, the impurity thin film including B is deposited byperforming a plasma treatment with a gas including diborane B₂H₆ or BF₃.

(Eleventh Aspect)

In the manufacturing method according to the first aspect, as theimpurity thin film, the impurity thin film including P is deposited byperforming a plasma treatment with a gas including phosphine PH₃.

(Twelfth Aspect)

In the manufacturing method according to the first aspect, as theimpurity thin film, the impurity thin film including As is deposited byperforming a plasma treatment with a gas including arsine AsH₃.

(Thirteenth Aspect)

In the manufacturing method according to the first aspect, animplantation ion in the first and second diagonal ion implantations isthe ion of a heavy atom which is larger in atomic weight than any one ofB, P, and As which constitute the impurity atom of the impurity thinfilm.

(Fourteenth Aspect)

In the manufacturing method according to the first aspect, animplantation ion in the first and second diagonal ion implantations isany one of Si, As, Ge, In, Sb, Xe, and Ar.

(Fifteenth Aspect)

In the manufacturing method according to the eighth aspect, a beamincidence angle to the surface of the cubic concavity and convexity partfrom the diagonal upper direction in the ion implantation is aninclination angle substantially less than 20 degrees.

(Sixteenth Aspect)

In the manufacturing method according to the first aspect, the impurityatom in the impurity thin film is recoiled from the inside of theimpurity thin film to the inside of the semiconductor substrate by anock on effect that is caused, at a surface part of the cubic concavityand convexity part, by collision of the implantation ion to the impurityatom in the impurity thin film in a direction substantially orthogonalto the surface part.

(Seventeenth Aspect)

In the manufacturing method according to the eighth aspect, the firstand second diagonal ion implantations are performed with low-energyimplantation less than 5 keV.

(Eighteenth Aspect)

In the manufacturing method according to the eighth aspect, the firstand second diagonal ion implantations are performed with low doseimplantation atomic weight less than 2E15 atoms/cm².

(Nineteenth Aspect)

In the manufacturing method according to the first aspect, the impuritythin film is thickly deposited on a plane part of the surface of thesemiconductor substrate except for the cubic concavity and convexitypart.

(Twentieth Aspect)

In the manufacturing method according to any one of the tenth throughtwelfth aspects, the impurity thin film is thickly deposited on a planepart of the semiconductor substrate except for the cubic concavity andconvexity part by increasing a deposition rate of the impurity thin filmdeposited on the plane part with the plasma treatment while bydecreasing, relative to that for the plane part, a deposition rate ofthe impurity thin film deposited on the side walls of the cubicconcavity and convexity part.

According to the present invention, it is possible to dope the impuritywith the same amount into the side wall portion and the upper flatportion of the cubic concavity and convexity part formed on the surfaceof the semiconductor substrate. As a result, it is possible toeffectively utilize the upper flat portion of the cubic concavity andconvexity part.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are diagrams which show an ion implantation process flowaccording to the embodiment of the present invention.

FIG. 2 is a perspective view for explaining a Fin type FET in which thepresent invention is applied.

FIGS. 3A to 3D are diagrams which show a process flow of a manufacturingmethod of a Fin type FET according to a proposal of the presentinventors.

FIG. 4 is a sectional view for explaining a relation between an ionimplantation angle and deposition thicknesses of impurity thin filmsdeposited to a side wall portion and an upper flat portion of a siliconFin part, which is for obtaining the same impurity diffusion amount.

FIG. 5 is a characteristic illustration which shows a relation among anion implantation angle, a deposition thickness of an impurity thin film,and an impurity amount implanted into silicon (semiconductor substrate).

FIG. 6 is a diagram for explaining a process flow of a manufacturingmethod of an example in case where the present invention is applied tomanufacturing of a CMOS FET.

FIG. 7 is a sectional view for explaining a recoil action according toan ion implantation of the present invention.

FIG. 8 is an enlarged sectional view which shows the recoil action ofFIG. 7.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring to FIGS. 1A to 1C, the description will be made in regard toan ion implantation process flow according to an embodiment of thepresent invention. FIGS. 1A to 1C illustrate an area shown by a dashedline in FIG. 2 with a sectional view, as well as FIGS. 3A to 3D.

At first, a silicon Fin part 11 as described before is formed onto thesurface of a silicon substrate 1 with an etching process or the like.Next, as shown in FIG. 1A, a plane part of the silicon substrate 1except for the silicon Fin part 11 is covered with an insulation layer16 that is an insulation film made of SiO₂ or the like. Subsequently,with the plasma treatment or the like similar to that was described inFIGS. 3A to 3D, a deposited film 2 including an impurity of P type or Ntype, e.g. B, is deposited to both side wall portions of the silicon Finpart 11 while a deposited film 2′ larger in thickness than the depositedfilm 2 is deposited to an upper flat portion of the silicon Fin part 11.Then, heavy ions are implanted by obliquely irradiating an ion beam 5 ofheavy ions of the impurity, i.e. Xe, Ge or the like, which is larger inmass (larger in atomic weight) than the impurity in the deposited films2 and 2′ from a left diagonal upper direction of the silicon Fin part11. As result, by a knock on effect (or action) which will be describedlater, electro-active impurity in silicon, which are present in thedeposited films 2 and 2′ is implanted into the inside of a left sidewall of the silicon Fin part 11 and the inside of the upper flat portionof the silicon Fin part 11. In this process, although an impuritydiffusion layer 3 is formed inside the left side wall of the silicon Finpart 11 while an impurity diffusion layer 4 is formed inside the upperflat portion of the silicon Fin part 11, the dose amount (ionimplantation amount) of the impurity diffusion layer 4 is approximatelya half of that of the impurity diffusion layer 3. The reason will bedescribed later.

Subsequently, as shown in FIG. 1B, heavy ions are implanted by obliquelyirradiating an ion beam 5 of heavy ions of the impurity used in theprocess described in FIG. 1A, i.e. Xe, Ge or the like from a rightdiagonal upper direction of the silicon Fin part 11.

As result, electro-active impurity in silicon, which are present in thedeposited films 2 and 2′ is implanted into the inside of a right sidewall of the silicon Fin part 11 and the inside of the upper flat portionof the silicon Fin part 11. In this process, an impurity diffusion layer3 is formed inside the both side walls of the silicon Fin part 11 whilean impurity diffusion layer 3′ is formed inside the upper flat portionof the silicon Fin part 11.

Here, it is desirable that the impurity dose amount (dose amount of theimpurity diffusion layer 3) to the both side walls of the silicon Finpart 11 with the irradiating of the ion beam 5 is equal to the impuritydose amount (dose amount of the impurity diffusion layer 3′) to theupper flat portion of the silicon Fin part 11 with the irradiating ofthe ion beam 5. In other words, it is desirable that a ratio of animpurity amount implanted into the side wall portion of the silicon Finpart 11 in FIG. 1A or FIG. 1B and an impurity amount into the upper flatportion of the silicon Fin part 11 in FIG. 1A or FIG. 1B becomessubstantially 2:1. To do that, it is desirable that an incidence angle α(an angle to a vertical line or a side wall surface of the silicon Finpart 11) of the ion beam 5 and a relation between a thickness t1 of thedeposited film 2 and a thickness t2 of the deposited film 2′ are set asfollows.

Referring to FIG. 4, an incidence angle α (an angle that the incidenceangle of the ion beam 5 forms to a vertical line) of the ion beam 5 to aside wall surface of the silicon Fin part 11 is set within 20° in eachof FIGS. 1A and 1B, and it is desirable to set to approximately 10°.When the beam incidence angle α is 10°, an ion implantation angle β tothe side wall surface of the silicon Fin part 11 is 80°. In this event,in comparison with an ion implantation angle θ (=10° of the upper flatportion of the silicon Fin part 11, the dose amount of the side wall ofthe silicon Fin part 11 is defined by cos 80°/cos 10°=0.174. That is, ifthe dose amount of Nd=1E14 is required for the side wall of the siliconFin part 11, the dose amount of the upper flat portion of the siliconFin part 11 is 5.64E14. In this case, it is possible to performconformal doping by setting a thickness t2 of the deposited film 2′ ofthe silicon Fin part 11 relative to a thickness t1 of the deposited film2 to a value so that the dose amount of the upper flat portion of thesilicon Fin part 11 becomes a half of that of the side wall portion ofthe silicon Fin part 11 and by performing ion implantation with the ionbeam of the heavy ion. With respect to a ratio of the thickness of thedeposited film 2 and the thickness of the deposited film 2′, it isdesirable that the thickness t2 of the deposited film 2′ is more thantwice the thickness t1 of the deposited film 2 and t2:t1=10:3 is moredesirable. With respect to the heavy ion, Xe is more desirable than Ge.

FIG. 5 shows a relation among the ion implantation angle β (=90−θ) tothe side wall portion of the silicon Fin part, the thickness of thedeposited film of the side wall portion, and the impurity dose amount tothe silicon substrate and a relation among the ion implantation angle θto the upper flat portion of the silicon Fin part, the thickness of thedeposited film of the upper flat portion, and the impurity dose amountto the silicon substrate.

Turning back to FIG. 1C, after completion of the process in FIG. 1B, thedeposited films 2 and 2′ are removed.

In the formation of the deposited film with the plasma treatment, sincethe plane part of the silicon substrate 1 except for the silicon Finpart 11 is covered with the insulation layer 6, a deposited film (notshown) is formed on the insulation layer 6. In this event, even if theimpurity is implanted into the insulation layer 6 with the heavy ionimplantation according to the ion beam irradiation, such an impurityimplantation to the insulation film does not cause the problem withrespect to an electrical characteristic of the device. Although thethickness of the deposited film formed on the plane part of siliconsubstrate 1 becomes larger than that of the deposited film formed to theside wall portion of the silicon Fin part 11, this also does not causeany problems. The above-mentioned points are applied to examples whichwill be described later.

Referring to FIG. 6, an example of the present invention will bedescribed.

FIG. 6 shows a process flow which forms a CMOS (Complementary MetalOxide Semiconductor) EFT. In the example, deposited films including P orB are selectively formed to an N-type device region and a P-type deviceregion, respectively. Then, extension regions of N-type MOSFET andP-type MOSFET (which are referred to as an N-type MOS part and a N-typeMOS part) are formed on the same substrate, as an N-type Fin part and aP-type Fin part, with two mask alignments.

For convenience, as described in FIG. 2, FIG. 6 shows a case with asectional view, where CMOSFETs each of which is comprised of a drain Finpart (a part shown by D in FIG. 2), a channel Fin part (an inside partof a part shown by G in FIG. 2), and a source Fin part (a part shown byS in FIG. 2) are formed, as the N-type MOS part and the P-type MOS part,respectively, to Fin-shaped silicon Fin parts which are formed to asilicon substrate 1 with the etching process or the like. In particular,FIG. 6 shows a Fin part which is one of a source and a drain of theN-type MOS part or P-type MOS part and a Fin part which is another oneof a source and a drain of the N-type MOS part or P-type MOS part.

In a process (1) (left upper drawing) of FIG. 6, a plane part of asilicon substrate 1 except for the surface of a P-Fin part (P-Fin) whichbecomes the P-type MOS part and the surface of an N-Fin part (N-Fin)which becomes the N-type MOS part is previously covered with aninsulation layer 6. Subsequently, with the state that the N-Fin part(N-Fin) which is one of the P-Fin and N-Fin parts and which becomes theN-type MOS part is covered with a resist 61, deposited films 2 and 2′including B (Boron) are formed, as in the case of FIG. 1A, to thesurface (side wall portions and upper flat portion) of the P-Fin part(P-Fin) which is another one of the P-Fin and N-Fin parts and whichbecomes the P-type MOS part with plasma 22.

Next, in a process (2) (right upper drawing in FIG. 6), with the statethat the N-Fin part (N-Fin) which becomes the N-type MOS part is coveredwith the resist 61, heavy ions are implanted into the P-Fin part of theP-type MOS part by irradiating an ion beam 5 of Xe (or Ge) from adiagonal direction of upper right (or upper left) and from a diagonaldirection of upper left (or upper right) in order.

In a process (3) (left under drawing in FIG. 6), at first, the resist 61of the N-type MOS part is removed and simultaneously the deposited films2 and 2′ of the P-type MOS part are removed. After this, with the statethat the P-Fin part which becomes the P-type MOS part is covered withthe resist 61′, deposited films 2-1 and 2-1′ including P (Phosphorus)are formed, as in the case of FIG. 1A, to the surface (side wallportions and upper flat portion) of the N-Fin part (N-Fin) which becomesthe N-type MOS part with plasma 22.

Next, in a process (4) (right under drawing in FIG. 6), with the statethat the P-Fin part which becomes the P-type MOS part is covered with aresist 61′, heavy ions are implanted into the N-Fin part of the N-typeMOS part by irradiating an ion beam 5′ of Xe (or Ge) from a diagonaldirection of upper right (or upper left) and from a diagonal directionof upper left (or upper right) in order. After this, the deposited films2-1 and 2-1′ of the N-type MOS part are removed together with theremoval of the resist 61′.

With the manner described above, two sets of source-drain are formed byforming the N-type MOS part having impurity diffusion layers 3-1 and3-1′ formed to the side wall portions and the upper flat portion,respectively, of the N-Fin part (N-Fin) with a uniform dose amount andforming the P-type MOS part having impurity diffusion layers 3 and 3′formed to the side wall portions and the upper flat portion,respectively, of the P-Fin part (P-Fin) with a uniform dose amount.

FIGS. 7 and 8 are diagrams for explaining the recoil action according tothe embodiment of this invention. Herein, although the description willbe made with respect to a case of the upper right process (2) in FIG. 6,FIGS. 7 and 8 show only the part necessary for the explanation.

In FIG. 7, with the ion beam irradiation to the silicon Fin part from adiagonal direction of upper left, the impurity atom B in the depositedfilm 2 that is formed to the surface part of the silicon Fin part 11 isrecoiled from the inside of the deposited film 2 to the inside of thesilicon Fin part 11 by a nock on effect that is caused by collision ofthe implantation ion to the impurity atom B in the deposited film 2 in adirection substantially orthogonal to the surface of the side wall ofthe silicon Fin part (substantially perpendicular direction).

In general, when particles (atom/ion) accelerated at high speed areimplanted into the substance of a solid or liquid material, the energyof the particles decreases gradually as the particles colliding withatoms constituting the material. Finally, the particles stop, when theenergy of the implantation particles decreases to the energy that issmaller than the potential energy that the material produces. In thistime duration, in an energy range utilized in a usual ion implantation,several dozen to several thousand atoms in the material are receivedwith the energy.

FIG. 7 shows a movement of one colliding-particle to make it easy tounderstand the recoil action based on the principle mentioned above.However, in reality, as shown in FIG. 8 with an enlarged diagram,multiple and multistage collisions (first through n-th collision) areoccurred in the inside of the deposited film 2.

Especially, when the mass of the colliding-particle is heavier in weightthan that of the atom constituting the material of the deposited film,it is possible to give the energy to the more atoms constituting thematerial. In this case, quite a number of purpose impurity atoms morethan the incident particles can be implanted (introduced) within thesemiconductor substrate. Furthermore, since the energy of theimplantation ion can be set higher than the energy given to the purposeimpurity atoms, the space-charge effect is suppressed lower than a caseof the direct implantation, and it is possible to set the high beamcurrent.

EFFECT OF THE EMBODIMENT

According to the embodiments of the present invention, by the formationof the deposited thin film with the plasma and by the recoil action(knock on effect) caused by the ion implantation, it is possible touniformly implant the impurity into all the side wall portions and theupper flat portion of the cubic three-dimension device. As a result, itis possible to effectively utilize the upper portion of the silicon Finpart.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, the present inventionis not limited to these embodiments. It will be understood by those ofordinary skill in the art that various changes in form and details maybe made therein without departing from the sprit and scope of thepresent invention as defined by the claims.

For example, the solid material which becomes the base substrate of thesemiconductor device is a solid silicon (silicon: single crystal orpolycrystalline), GaAs, Ge, SiC, a compound semiconductor or the like.

In addition, it is desirable that a recoil condition, namely, the energy(depth profile corresponding to an implantation depth) for the ionimplantation of the impurities of the impurity thin film or a doseatomic weight corresponding to an implantation dose amount is controlledby an adjustment of a film thickness of the impurity thin film(deposited film) or a species of an impurity deposition material of theimpurity thin film, or an adjustment of an implantation ion species, animplantation angle, an implantation energy, and an implantation doseamount.

In this case, it is desirable that a condition of non-implantation isadjusted by adjusting a film thickness of the impurity thin film, aspecies of the impurity deposition material, an implantation ionspecies, an implantation angle, an implantation energy, and animplantation dose amount so that the implantation ion itself remains inthe impurity thin film without being almost introduced into a concavityand convexity part formed by the processing of the semiconductorsubstrate.

For the impurity atom of the impurity thin film, As may be used otherthan B and P.

As a gas which is used to deposit the impurity thin film including Bwith the plasma treatment, a gas including BF₃ may be used in place ofdiborane B₂H₆.

On the other hand, there is a gas including phosphine PH₃ as a favorableexample of the gas which is used to deposit the impurity thin filmincluding P with the plasma treatment.

In addition, there is a gas including arsine AsH₃ as a favorable exampleof the gas which is used to deposit the impurity thin film including Aswith the plasma treatment.

For the implantation ion in the ion implantation process, it can use anyone of Si, As, Ge, In, Sb, Xe, and Ar.

In addition, the following process may be adopted. After the formationof a deposited film including B to the semiconductor substrate with aplasma treatment by the use of B₂H₆, covers the whole of the surface ofthe semiconductor substrate with a resist protective film and thenremoves the resist protective film selectively so as to expose a part ofthe surface of the semiconductor substrate wherein the resist protectivefilm was removed. Subsequently, removes the deposited film including Bof a part corresponding to an exposed part and then forms a depositedfilm including P to a removed part with a plasma treatment by the use ofPH₃. After removing the whole of the resist protective film, any one ionof Ge, Si, As, In, Sb, Xe, and Ar is implanted to the whole of thesurface of the semiconductor substrate.

What is claimed is:
 1. A manufacturing method of a semiconductor devicecomprising; forming a cubic concavity and convexity part on the surfaceof a semiconductor substrate which is a base substrate of thesemiconductor device, said cubic concavity and convexity part havingside wall portions and an upper flat portion; depositing on the surfaceof said semiconductor substrate an impurity thin film including animpurity atom which becomes a donor or an acceptor in the semiconductorsubstrate so that a film thickness of the impurity thin film formed onthe surface of said upper flat portion becomes large relative to a filmthickness of the impurity thin film formed on the surface of said sidewall portions; performing a first diagonal ion implantation from adiagonal upper direction to the impurity thin film deposited on thecubic concavity and convexity part and subsequently a second diagonalion implantation from an opposite diagonal upper direction to theimpurity thin film deposited on the cubic concavity and convexity part;and recoiling the impurity atom from the inside of the impurity thinfilm to the inside of the side wall portions and the inside of the upperflat portion of said cubic concavity and convexity part by performingthe first and second diagonal ion implantations.
 2. The manufacturingmethod according to claim 1, wherein a ratio of impurity implantationsto the side wall portion and the upper flat portion is adjusted byadjusting a ratio of a deposition thickness of the impurity thin filmdeposited to the side wall portion and a deposition thickness of theimpurity thin film deposited to the upper flat portion.
 3. Themanufacturing method according to claim 1, wherein a ratio of impurityimplantations to the side wall portion and the upper flat portion isadjusted by adjusting an ion implantation angle of said first and seconddiagonal ion implantations.
 4. The manufacturing method according toclaim 1, wherein a ratio of impurity implantations to the side wallportion and the upper flat portion is adjusted by adjusting a ratio of adeposition thickness of the impurity thin film deposited to the sidewall portion and a deposition thickness of the impurity thin filmdeposited to the upper flat portion and by adjusting an ion implantationangle of said first and second diagonal ion implantations.
 5. Themanufacturing method according to claim 1, wherein an impurity isimplanted into the side wall portion and the upper flat portion at aratio of substantially 2:1 in amount by adjusting a ratio of adeposition thickness of the impurity thin film deposited to the sidewall portions and a deposition thickness of the impurity thin filmdeposited to the upper flat portion and by adjusting an ion implantationangle of said first and second diagonal ion implantations.
 6. Themanufacturing method according to claim 5, wherein, by performing thefirst diagonal ion implantation from the diagonal upper direction andthe second diagonal ion implantation from the opposite diagonal upperdirection, the impurity is implanted into the side wall portion and theupper flat portion with the same amount.
 7. The manufacturing methodaccording to claim 3, wherein a ratio of a deposition thickness of theimpurity thin film deposited to the side wall portions and a depositionthickness of the impurity thin film deposited to the upper flat portiona ratio of deposited film is set so that the deposition thickness of theimpurity thin film deposited to the upper flat portion is twice or morethe deposition thickness of the impurity thin film deposited to the sidewall portion.
 8. The manufacturing method according to claim 1, whereina recoil condition and a dose atomic weight corresponding to animplantation dose amount are controlled by an adjustment of a depositionthickness of the impurity thin film deposited to the side wall portionand a deposition thickness of the impurity thin film deposited to theupper flat portion, an adjustment of a species of an impurity depositionmaterial of the impurity thin film, or an adjustment of an implantationion species, an ion implantation angle, an implantation energy, and animplantation dose amount.
 9. The manufacturing method according to claim1, wherein the impurity atom of said impurity thin film is any one of B,P, and As.
 10. The manufacturing method according to claim 1, wherein,as said impurity thin film, the impurity thin film including B isdeposited by performing a plasma treatment with a gas including diboraneB₂H₆ or BF₃.
 11. The manufacturing method according to claim 1, wherein,as said impurity thin film, the impurity thin film including P isdeposited by performing a plasma treatment with a gas includingphosphine PH₃.
 12. The manufacturing method according to claim 1,wherein, as said impurity thin film, the impurity thin film including Asis deposited by performing a plasma treatment with a gas includingarsine AsH₃.
 13. The manufacturing method according to claim 1, whereinan implantation ion in the first and second diagonal ion implantationsis the ion of a heavy atom which is larger in atomic weight than any oneof B, P, and As which constitute the impurity atom of said impurity thinfilm.
 14. The manufacturing method according to claim 1, wherein animplantation ion in the first and second diagonal ion implantations isany one of Si, As, Ge, In, Sb, Xe, and Ar.
 15. The manufacturing methodaccording to claim 8, wherein a beam incidence angle to the surface ofthe cubic concavity and convexity part from the diagonal upper directionin said first and second diagonal ion implantations is an inclinationangle substantially less than 20 degrees.
 16. The manufacturing methodaccording to claim 1, wherein the impurity atom in said impurity thinfilm is recoiled from the inside of said impurity thin film to theinside of said semiconductor substrate by a nock on effect that iscaused, at a surface part of the cubic concavity and convexity part, bycollision of the implantation ion to the impurity atom in said impuritythin film in a direction substantially orthogonal to the surface part.17. The manufacturing method according to claim 8, wherein said firstand second diagonal ion implantations are performed with low-energyimplantation less than 5 keV.
 18. The manufacturing method according toclaim 8, wherein said first and second diagonal ion implantations areperformed with low dose implantation atomic weight less than 2E15atoms/cm².
 19. The manufacturing method according to claim 1, whereinthe impurity thin film is thickly deposited on a plane part of thesurface of said semiconductor substrate except for the cubic concavityand convexity part.
 20. The manufacturing method according to claim 10,wherein the impurity thin film is thickly deposited on a plane part ofthe semiconductor substrate except for the cubic concavity and convexitypart by increasing a deposition rate of the impurity thin film depositedon said plane part with said plasma treatment while by decreasing,relative to that for the plane part, a deposition rate of the impuritythin film deposited on the side walls of said cubic concavity andconvexity part.